文如泉;李德智;占丽娜;刘耀;胡文;廖建波;刘绍军;

• 1:萍乡学院机械电子工程学院
• 2:中南大学粉末冶金研究院

摘要(Abstract)：

选用CeO_2和Yb_2O_3两种不同的烧结助剂,用光固化后气压烧结制备了高致密的Si_3N_4陶瓷材料。在相同的烧结温度下,用CeO_2烧结试样中的β-Si_3N_4的晶粒尺寸比用Yb_2O_3为烧结助剂制备的试样的晶粒尺寸要大。其中:在1750℃,10 MPa条件下制备出了致密度到>95.8%Si_3N_4基陶瓷,力学性能分别为:σ_(max)=715.83±15.26 MPa、HV=14.16±0.43 MPa、K_(IC)=8.03 MPa·m~(1/2)。

关键词(KeyWords)： Si_3N_4陶瓷;光固化;气压烧结;显微组织;力学性能

Abstract:

Keywords:

基金项目(Foundation): 江西省教育厅科学计划项目(GJJ181102)

作者(Author): 文如泉;李德智;占丽娜;刘耀;胡文;廖建波;刘绍军;

Email:

DOI: 10.16521/j.cnki.issn.1001-9642.2020.12.004

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