硅酸锆薄膜制备的研究Research on Preparation of Zirconium Silicate Film
李聪;江伟辉;冯果;刘健敏;吴倩;劳新斌;张权;
摘要(Abstract)：
以正硅酸乙酯和氧氯化锆为硅源和锆源,去离子水为溶剂,采用溶胶-凝胶法在单晶硅表面制备了硅酸锆薄膜。利用pH计、zeta电位仪、SEM、XRD、AFM等测试手段研究了pH值、前驱体浓度对制备硅酸锆薄膜的影响,并研究了其抗四甲基氢氧化铵(TMAH)/异丙醇(IPA)腐蚀性能。结果表明:优化的pH值为0.5,对应溶胶的zeta电位最大,为43.8m V,所制备的薄膜质量最优;zeta电位随pH值的增加而减小,溶胶的稳定性和薄膜的质量也变差。当前驱体浓度小于0.6mol/L时,薄膜表面粗糙;当前驱体浓度大于0.6 mol/L时,薄膜表面出现了裂纹,且样品出现杂相。最优前驱体浓度为0.6mol/L,制得的硅酸锆薄膜可有效保护单晶硅片免受TMAH/IPA的腐蚀。
关键词(KeyWords)： 硅酸锆;薄膜;溶胶-凝胶法;pH值;前驱体浓度;抗腐蚀性
基金项目(Foundation): 国家自然科学基金资助项目(51362014,51662016,51402135);; 江西省优势科技创新团队建设计划项目(20133BCB 24010);; 江西省教育厅基金(GJJ150887,GJJ150919)
作者(Authors): 李聪;江伟辉;冯果;刘健敏;吴倩;劳新斌;张权;
DOI: 10.16521/j.cnki.issn.1001-9642.2017.09.010
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